, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC4706 description ? high collector-emitter breakdown voltage- : v(br)ceo= 600v(min) ? high switching speed ? high reliability applications ? designed for switching regulator and general purpose applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic i cm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @ tc=25-c junction temperature storage temperature range value 900 600 7 14 28 7 130 150 -55-150 unit v v v a a a w "c ?c i ? i 1 2 3 2 ?<; pin 1.base 2. collector 3.bw1itter to-3pn package ^ *uqily- a j. h i t k b ? i y-*- _^ dim a b c d e f g h j k l n q r s u y " - c ?*- ?'-'"* i ' ' < i? i -*^*-j ?- -?-r mm win 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10,89 4.90 3.35 1.995 5.90 9.90 max 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6.10 10.10 *- hi' g * --l ? ?d ? n ? n.i semi-conductors reserves the right to change test eonditions, parameter limits and paekiige dimensions vvithout notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going lo press. however. nj semi-conductors assumes no responsibility tor any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verity that datasheets are current before placing orders. qualify semi-conductors
silicon npn power transistor 2SC4706 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vse(sat) icbo iebo hfe cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain output capacitance current-gain ? bandwidth product conditions lc=10ma; ib= 0 |c=7a;ib=1.4a lc= 7a; ib= 1 .4a vcb= 800v ; ie= 0 veb= tv; lc= 0 lc= 7a ; vce= 4v ie= 0 ; vce= 10v; f,est=1.0mhz le=-1.5a;vce=12v min 600 10 typ. 160 6 max 0.5 1.2 0.1 0.1 25 unit v v v ma rna pf mhz switching times ton tstg tf turn-on time storage time fall time lc=7a,lbi=1-05a;lb2=-3.5a rl= 35.7 0 ; vcc= 250v 1.0 5.0 0.7 u s v s u s
|
